Title :
Three kinds of via electromigration failure mode in multilevel interconnections
Author :
Yamaha, Takahisa ; Naitou, Masaru ; Hotta, Tadahiko
Author_Institution :
Yamaha Corp., Shizuoka, Japan
fDate :
March 31 1992-April 2 1992
Abstract :
The via electromigration performance of four metallization systems has been investigated for via chains of 1500-4400 vias of 1.0 mu m diameter. AL(AL/Ti), (Al/Ti)AL, and AL/(WSi/AL) metallization systems have longer electromigration lifetime than AL/AL. The via failures have been analyzed by the contrast scanning ion microscope technique. Further failure analysis by focused ion beam milling on the opened via has revealed that at least three kinds of failure modes exist for via electromigration. Models for the failure mechanism in each metallization system are discussed.<>
Keywords :
aluminium alloys; copper alloys; electromigration; failure analysis; ion microscopy; metallisation; titanium alloys; AlCuTi; contrast scanning ion microscope technique; electromigration lifetime; failure mechanism; focused ion beam milling; metallization systems; multilevel interconnections; opened via; via chains; via electromigration failure mode; Aluminum; Current density; Dry etching; Electromigration; Failure analysis; Ion beams; Metallization; Silicon; Sputter etching; Stress;
Conference_Titel :
Reliability Physics Symposium 1992. 30th Annual Proceedings., International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0473-X
DOI :
10.1109/RELPHY.1992.187668
