3-dimensional simulations of temperature and current density distribution in a via structure

Author

Weide, K. ; Hasse, W.

Author_Institution

Inst. fuer Halbleitertechnol. & Werkstoffe der Elektrotech., Hannover Univ., Germany

fYear

1992

fDate

March 31 1992-April 2 1992

Firstpage

361

Lastpage

365

Abstract

The influence of geometry (overlap, step coverage, filling ratio), and filling material on temperature and current density distributions in via structures of different forms and technologies simulated with the finite element method program ANSYS was studied. Vias of square, circular, and oval forms were investigated. The influence of via filling was observed. Reduction of current crowding and self-heating effects were found for the tungsten-filled via. Critical parameters for the filling materials were determined. Local temperature and current density distributions are shown.<>

Keywords

digital simulation; finite element analysis; metallisation; tungsten; ANSYS; current crowding; current density distribution; filling material; filling ratio; finite element method; geometry; overlap; self-heating effects; step coverage; temperature distributions; via filling; via structure; Current density; Dielectrics; Extrapolation; Filling; Integrated circuit reliability; Metallization; Proximity effect; Solid modeling; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium 1992. 30th Annual Proceedings., International

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-0473-X

Type

conf

DOI

10.1109/RELPHY.1992.187670

Filename

187670