DocumentCode
2923083
Title
GaAs-AlGaAs and InGaAs-InAlAs quantum cascade lasers
Author
Wilson, L.R. ; Keightley, P.T. ; Cockburn, J.W. ; Skolnick, M.S. ; Clark, J.C. ; Grey, R. ; Hill, G. ; Hopkinson, M.
Author_Institution
Dept. of Phys. & Astron., Sheffield Univ., UK
fYear
2000
fDate
7-12 May 2000
Firstpage
267
Abstract
Summary form only given. We present a comprehensive, comparative study of the lasing characteristics of GaAs-AlGaAs and InGaAs-InAlAs quantum cascade (QC) lasers. At low temperature the performance of devices from both material systems is comparable. A threshold current density (J/sub th/) of 3.2 kA/cm/sup 2/ and peak power of 800 mW are measured for an optimised InGaAs-InAlAs sample (/spl lambda//spl sim/8.3 /spl mu/m) at 10 K.
Keywords
aluminium compounds; current density; gallium arsenide; optimisation; quantum well lasers; 10 K; 800 mW; GaAs-AlGaAs; GaAs-AlGaAs quantum cascade lasers; InGaAs-InAlAs; InGaAs-InAlAs quantum cascade lasers; lasing characteristics; optimised InGaAs-InAlAs sample; peak power; threshold current density; Artificial intelligence; Current measurement; Doping; Indium compounds; Optical materials; Optical scattering; Power measurement; Quantum cascade lasers; Temperature; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
1-55752-634-6
Type
conf
DOI
10.1109/CLEO.2000.906996
Filename
906996
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