Title :
Effect and extraction of series resistance in A23-InGaAs MOS with bulk-oxide trap
Author :
Yu, Bei ; Yuan, Yuan ; Chen, Han-Ping ; Ahn, Jeongseob ; McIntyre, Paul C. ; Taur, Yuan
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California - San Diego, La Jolla, CA, USA
Abstract :
The effect of parasitic series resistance in the accumulation region has been investigated under the framework of the distributed bulk-oxide trap model. It is shown that while the series resistance may be too small to impact the total capacitance, it can have a significant effect on the total conductance by adding a term ∝ ∝2. It leads to a proposal of an extraction method for series resistance. The enhanced bulk-oxide trap model with series resistance as well as dielectric leakage can explain the uncommon conductance frequency dispersion data for an Al2O3-InGaAs MOS capacitor with 2.5 nm thin Al2O3 layer.
Keywords :
III-V semiconductors; MOS capacitors; accumulation layers; aluminium compounds; capacitance; electric admittance; electric resistance; gallium arsenide; indium compounds; Al2O3-InGaAs; MOS capacitor; accumulation region; conductance frequency dispersion; dielectric leakage; distributed bulk-oxide trap model; extraction method; parasitic series resistance; size 2.5 nm; total capacitance; total conductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2013.0433
