DocumentCode
29232
Title
Effect and extraction of series resistance in A23-InGaAs MOS with bulk-oxide trap
Author
Yu, Bei ; Yuan, Yuan ; Chen, Han-Ping ; Ahn, Jeongseob ; McIntyre, Paul C. ; Taur, Yuan
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of California - San Diego, La Jolla, CA, USA
Volume
49
Issue
7
fYear
2013
fDate
March 28 2013
Firstpage
492
Lastpage
493
Abstract
The effect of parasitic series resistance in the accumulation region has been investigated under the framework of the distributed bulk-oxide trap model. It is shown that while the series resistance may be too small to impact the total capacitance, it can have a significant effect on the total conductance by adding a term ∝ ∝2. It leads to a proposal of an extraction method for series resistance. The enhanced bulk-oxide trap model with series resistance as well as dielectric leakage can explain the uncommon conductance frequency dispersion data for an Al2O3-InGaAs MOS capacitor with 2.5 nm thin Al2O3 layer.
Keywords
III-V semiconductors; MOS capacitors; accumulation layers; aluminium compounds; capacitance; electric admittance; electric resistance; gallium arsenide; indium compounds; Al2O3-InGaAs; MOS capacitor; accumulation region; conductance frequency dispersion; dielectric leakage; distributed bulk-oxide trap model; extraction method; parasitic series resistance; size 2.5 nm; total capacitance; total conductance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2013.0433
Filename
6504982
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