DocumentCode :
2923234
Title :
Effect of Threshold-Voltage Instability on SiC DMOSFET Reliability
Author :
Lelis, Aivars ; Habersat, D. ; Green, R. ; Goldsman, N.
Author_Institution :
U.S. Army Research Laboratory, Adelphi, MD 20783, USA
fYear :
2008
fDate :
12-16 Oct. 2008
Firstpage :
1
Lastpage :
24
Keywords :
Silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
South lake Tahoe, CA, USA
ISSN :
1930-8841
Print_ISBN :
978-1-4244-2194-7
Electronic_ISBN :
1930-8841
Type :
conf
DOI :
10.1109/IRWS.2008.4796136
Filename :
4796136
Link To Document :
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