• DocumentCode
    2923308
  • Title

    Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and HK Gate Stacks

  • Author

    Grasser, Tibor ; Kaczer, Ben ; Aichinger, Thomas ; Goes, Wolfgang ; Nelhiebel, Michael

  • Author_Institution
    CDL for TCAD, TU Vienna, Wien, Austria
  • fYear
    2008
  • fDate
    12-16 Oct. 2008
  • Firstpage
    1
  • Lastpage
    17
  • Keywords
    Acceleration; Degradation; Interface states; Negative bias temperature instability; Niobium compounds; Stress; Temperature dependence; Thermal force; Titanium compounds; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
  • Conference_Location
    South lake Tahoe, CA, USA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4244-2194-7
  • Electronic_ISBN
    1930-8841
  • Type

    conf

  • DOI
    10.1109/IRWS.2008.4796140
  • Filename
    4796140
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2923308