• DocumentCode
    2923446
  • Title

    Towards Understanding Negative Bias Temperature Instability

  • Author

    Grasser, Tibor

  • Author_Institution
    Christian Doppler Laboratory for TCAD in Microelectronics, Institute for Microelectronics, TU Vienna, GuÃ\x9fhausstraÃ\x9fe 27-29, A-1040 Wien, Austria
  • fYear
    2008
  • fDate
    12-16 Oct. 2008
  • Firstpage
    1
  • Lastpage
    85
  • Keywords
    Current measurement; Delay; MOSFETs; Microelectronics; Negative bias temperature instability; Niobium compounds; Particle measurements; Stress measurement; Threshold voltage; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
  • Conference_Location
    South lake Tahoe, CA, USA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4244-2194-7
  • Electronic_ISBN
    1930-8841
  • Type

    conf

  • DOI
    10.1109/IRWS.2008.4796147
  • Filename
    4796147
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2923446