DocumentCode :
2923446
Title :
Towards Understanding Negative Bias Temperature Instability
Author :
Grasser, Tibor
Author_Institution :
Christian Doppler Laboratory for TCAD in Microelectronics, Institute for Microelectronics, TU Vienna, GuÃ\x9fhausstraÃ\x9fe 27-29, A-1040 Wien, Austria
fYear :
2008
fDate :
12-16 Oct. 2008
Firstpage :
1
Lastpage :
85
Keywords :
Current measurement; Delay; MOSFETs; Microelectronics; Negative bias temperature instability; Niobium compounds; Particle measurements; Stress measurement; Threshold voltage; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
South lake Tahoe, CA, USA
ISSN :
1930-8841
Print_ISBN :
978-1-4244-2194-7
Electronic_ISBN :
1930-8841
Type :
conf
DOI :
10.1109/IRWS.2008.4796147
Filename :
4796147
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2923446
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