Title :
The silicon lateral trench detector in multi-Gb/s receiver systems
Author :
Rogers, Dennis L.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Using a simple model based on a parallel plate approximation it is shown, as expected, that a PIN base receiver can outperform an LTD analog but that the advantages of monolithic integration can in many cases make up for that difference. For bandwidths in excess of 3GHz the cost advantages of a monolithic silicon technology might still make the LTD the detector of choice in many applications especially for short haul high speed links for computer interconnects.
Keywords :
CMOS integrated circuits; integrated optoelectronics; optical interconnections; optical receivers; photodetectors; photodiodes; 3 GHz; LTD receiver; PIN base receiver; Si; computer interconnects; cost advantages; fiber optic communication systems; high speed CMOS technologies; monolithic integration; multi-Gb/s receiver systems; parallel plate approximation; short haul high speed links; silicon lateral trench detector; Absorption; Bandwidth; CMOS technology; Capacitors; Circuits; Detectors; Frequency response; Optical surface waves; Parasitic capacitance; Silicon;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1159488
