Title :
10 Gbps all silicon APD optical receiver
Author :
Yang, B. ; Schaub, J.D. ; Csutak, S.M. ; Campbell, J.C.
Author_Institution :
Texas Univ., Austin, TX, USA
Abstract :
Summary form only given. In this paper, we report an all silicon optical receiver operating at 10 Gbps. A high quantum efficiency-bandwidth product was achieved by operating the photodiode in the avalanche regime. Planar p-i-n photodiodes were fabricated using standard CMOS technology on commercially available 2 μm SOI substrates. The photodiodes exhibited 3 dB optical bandwidth greater than 8 GHz. At higher bias, avalanche gain was observed. In this work, the photodiode was wire-bonded to a 10 Gbps transimpedance amplifier (TIA).
Keywords :
CMOS integrated circuits; avalanche photodiodes; integrated optoelectronics; optical receivers; p-i-n photodiodes; silicon-on-insulator; 10 Gbit/s; 10 Gbps all silicon APD optical receiver; 2 micron; 3 dB optical bandwidth; 8 GHz; CMOS technology; SOI substrate; Si-SiO2; avalanche gain; avalanche regime; high quantum efficiency-bandwidth product; planar p-i-n photodiodes; transimpedance amplifier; wire bonding; Bit rate; CMOS process; CMOS technology; Optical amplifiers; Optical fiber communication; Optical receivers; Optical transmitters; Photodiodes; Silicon; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1159489
