Long wavelength VCSEL using ion-implantation and dielectric mirror

Author

Ju, Young-Gu ; Hahn, Won-suk ; Shin, Jae-Heon ; Kim, Jong-Hee ; Song, Hyun-Woo ; Kwon, O-Kyun

Author_Institution

Electron. & Telecommun. Res. Inst., Taejon, South Korea

Volume

2

fYear

2002

fDate

10-14 Nov. 2002

Firstpage

695

Abstract

We proposed a new type of 1550 nm VCSEL incorporating proton implantation and a dielectric mirror. Even though it suffers from poor heat removal rate, it could be a promising structure since the structure and fabrication scheme rely on stable material and well-established processing techniques. The fabricated laser operates under pulsed conditions emitting at 1550 nm. The use of flip-chip bonding and good choice of dielectric material may improve the overall laser performance.

Keywords

distributed Bragg reflector lasers; flip-chip devices; ion implantation; laser mirrors; optical fabrication; quantum well lasers; surface emitting lasers; 1550 nm; dielectric mirror; fabrication; flip-chip bonding; ion-implantation; laser performance; long wavelength VCSEL; poor heat removal rate; proton implantation; pulsed conditions; stable material; well-established processing techniques; Apertures; Dielectric materials; Indium phosphide; Mirrors; Optical materials; Protons; Space vector pulse width modulation; Surface emitting lasers; Thermal conductivity; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1159496

Filename

1159496