DocumentCode
2923782
Title
Photoluminescence up-conversion in five Inx (Al0.17 Ga0.83 )1-x As/Al0.17 Ga0.83 As quantum wells with different x values
Author
Machida, S. ; Tadakuma, T. ; Satake, A. ; Fujiwara, K. ; Folkenberg, J.R. ; Hvam, J.M.
Author_Institution
Kyushu Institute of Technology, Japan, machida.satoru2@renesas.com
fYear
2005
fDate
30-02 Aug. 2005
Firstpage
893
Lastpage
894
Abstract
Photoluminescence (PL) up-conversion in a unique system with five different quantum wells has been investigated. Anti-Stokes PL intensity observed shows dramatic dependence on where carriers are resonantly photoexcited, indicating nonlinear processes with spatial position dependence.
Keywords
InAlGaAs; Nonlinear optical properties; Photoluminescence up-conversion; Quantum well; Energy states; Excitons; Gallium arsenide; Laser excitation; Photoluminescence; Power lasers; Radiative recombination; Resonance; Substrates; Wavelength measurement; InAlGaAs; Nonlinear optical properties; Photoluminescence up-conversion; Quantum well;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN
0-7803-9242-6
Type
conf
DOI
10.1109/CLEOPR.2005.1569591
Filename
1569591
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