Material electronic quality specification factors for polycrystalline silicon wafers

Author

Bailey, Jeff ; Kalejs, J.P. ; Keaveny, C.

Author_Institution

Dept. of Mater. Sci. & Miner. Eng., California Univ., Berkeley, CA, USA

Volume

2

fYear

1994

fDate

5-9 Dec 1994

Firstpage

1356

Abstract

We present a scheme to monitor quality (diffusion length) improvement, or upgrading, for inhomogeneous polycrystalline silicon wafers. Statistically-based parameters and scaling factors are defined to represent individual regions of varying diffusion length, and are used to follow material electronic property changes from crystal growth through upgrading steps, including phosphorus diffusion, hydrogen passivation and aluminum firing. Measurements of diffusion length using two different methods, SPV and IRPC are used

Keywords

aluminium; carrier lifetime; crystal growth; elemental semiconductors; passivation; phosphorus; photoconductivity; semiconductor device metallisation; semiconductor doping; semiconductor growth; silicon; IRPC; Ir photoconductive current; SPV; Si:P; Si:P-Al; aluminum firing; crystal growth; diffusion length; hydrogen passivation; inhomogeneous polycrystalline silicon wafers; material electronic quality specification factors; phosphorus diffusion; polycrystalline silicon wafers; scaling factors; statistically-based parameters; surface photovoltage; upgrading steps; Gettering; Hydrogen; Materials science and technology; Minerals; Monitoring; Passivation; Photoconducting materials; Photovoltaic cells; Pollution measurement; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520198

Filename

520198