Title :
Material electronic quality specification factors for polycrystalline silicon wafers
Author :
Bailey, Jeff ; Kalejs, J.P. ; Keaveny, C.
Author_Institution :
Dept. of Mater. Sci. & Miner. Eng., California Univ., Berkeley, CA, USA
Abstract :
We present a scheme to monitor quality (diffusion length) improvement, or upgrading, for inhomogeneous polycrystalline silicon wafers. Statistically-based parameters and scaling factors are defined to represent individual regions of varying diffusion length, and are used to follow material electronic property changes from crystal growth through upgrading steps, including phosphorus diffusion, hydrogen passivation and aluminum firing. Measurements of diffusion length using two different methods, SPV and IRPC are used
Keywords :
aluminium; carrier lifetime; crystal growth; elemental semiconductors; passivation; phosphorus; photoconductivity; semiconductor device metallisation; semiconductor doping; semiconductor growth; silicon; IRPC; Ir photoconductive current; SPV; Si:P; Si:P-Al; aluminum firing; crystal growth; diffusion length; hydrogen passivation; inhomogeneous polycrystalline silicon wafers; material electronic quality specification factors; phosphorus diffusion; polycrystalline silicon wafers; scaling factors; statistically-based parameters; surface photovoltage; upgrading steps; Gettering; Hydrogen; Materials science and technology; Minerals; Monitoring; Passivation; Photoconducting materials; Photovoltaic cells; Pollution measurement; Silicon;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520198
