Photoelectrochemical diffusion length measurements on p-type multicrystalline silicon for industrial quality control

Author

Sarti, Dominique ; Chareyron, Bruno ; Le, Quang Nam ; Bastide, Stéphane ; Lincot, Daniel

Author_Institution

Photowatt Int. SA, Bourgoin-Jallieu, France

Volume

2

fYear

1994

fDate

5-9 Dec 1994

Firstpage

1360

Abstract

We report on a method based on photoelectrochemistry which allows the measurement of diffusion lengths of multicrystalline silicon before fabricating the photovoltaic device. The results obtained with this method after two years experience on a production line, by the photovoltaic manufacturer Photowatt Int. are presented. It concerns the variation of the diffusion length within the ingots and its correlation with the short-circuit current of the final cells, and the effect of industrial gettering. We also present diffusion length maps on a 10×10 cm² cell

Keywords

carrier lifetime; electrochemistry; elemental semiconductors; getters; minority carriers; photoelectrochemistry; quality control; silicon; solar cells; 10 cm; Photowatt International; Si; Si ingots; diffusion length maps; diffusion length measurements; industrial gettering; industrial quality control; p-type multicrystalline silicon; photoelectrochemistry; photovoltaic device; production line; short-circuit current; Contacts; Industrial control; Length measurement; Photoconductivity; Photovoltaic systems; Production; Semiconductor materials; Silicon; Solar power generation; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520199

Filename

520199