Title :
InGaN/GaN MQW LEDs with Si treatment
Author :
Hsu, Y.P. ; Chang, S.J. ; Su, Y.K. ; Tsai, J.M. ; Chen, S.C. ; Lai, W.C. ; Kuo, C.H. ; Chang, C.S.
Author_Institution :
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University, Tainan, 70101, TAIWAN
Keywords :
Gallium nitride; LED lamps; Light emitting diodes; Quantum well devices; Refractive index; Rough surfaces; Semiconductor device measurement; Surface morphology; Surface roughness; Surface treatment;
Conference_Titel :
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN :
0-7803-9242-6
DOI :
10.1109/CLEOPR.2005.1569595