Title :
The growth of SixGe1-x-crystals for infrared solar cell applications
Author :
Wollweber, J. ; Schulz, D. ; Schröder, W. ; Abrosimov, N.V.
Author_Institution :
Inst. fur Kristallzuchtung, Berlin, Germany
Abstract :
Monocrystalline SixGe1-x alloys may be a powerful material for infrared solar cell applications. In comparison with pure Si, Ruiz et al. (1994) have shown that SiGe-solar cells should increase their efficiency by 2% for x=0.5. However the optimum is quite broad and the maximum of this benefit may be reached with low Ge content cells. On the other hand the availability of a large quantity of SiGe-bulk crystals through the whole composition range is suitable for studies of fundamental properties of SiGe alloys. The present work focuses on new results in the growth of SiGe-single crystals prepared by two methods: (i) an RF-heated float zone-technique; and (ii) a conventional Czochralski-technique
Keywords :
Ge-Si alloys; crystal growth from melt; semiconductor device testing; semiconductor growth; solar cells; zone melting; Czochralski-technique; SixGe1-x crystal growth; SiGe; applications; bulk crystals; efficiency; float zone-technique; infrared solar cells; semiconductor; Automatic control; Control systems; Crystals; Germanium silicon alloys; Optical microscopy; Optical sensors; Photovoltaic cells; Resistance heating; Silicon germanium; Temperature control;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520202
