• DocumentCode
    2923930
  • Title

    The growth of SixGe1-x-crystals for infrared solar cell applications

  • Author

    Wollweber, J. ; Schulz, D. ; Schröder, W. ; Abrosimov, N.V.

  • Author_Institution
    Inst. fur Kristallzuchtung, Berlin, Germany
  • Volume
    2
  • fYear
    1994
  • fDate
    5-9 Dec 1994
  • Firstpage
    1372
  • Abstract
    Monocrystalline SixGe1-x alloys may be a powerful material for infrared solar cell applications. In comparison with pure Si, Ruiz et al. (1994) have shown that SiGe-solar cells should increase their efficiency by 2% for x=0.5. However the optimum is quite broad and the maximum of this benefit may be reached with low Ge content cells. On the other hand the availability of a large quantity of SiGe-bulk crystals through the whole composition range is suitable for studies of fundamental properties of SiGe alloys. The present work focuses on new results in the growth of SiGe-single crystals prepared by two methods: (i) an RF-heated float zone-technique; and (ii) a conventional Czochralski-technique
  • Keywords
    Ge-Si alloys; crystal growth from melt; semiconductor device testing; semiconductor growth; solar cells; zone melting; Czochralski-technique; SixGe1-x crystal growth; SiGe; applications; bulk crystals; efficiency; float zone-technique; infrared solar cells; semiconductor; Automatic control; Control systems; Crystals; Germanium silicon alloys; Optical microscopy; Optical sensors; Photovoltaic cells; Resistance heating; Silicon germanium; Temperature control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
  • Conference_Location
    Waikoloa, HI
  • Print_ISBN
    0-7803-1460-3
  • Type

    conf

  • DOI
    10.1109/WCPEC.1994.520202
  • Filename
    520202
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2923930