• DocumentCode
    2923946
  • Title

    Effect of the Passivation Layers on Organic Light Emitting Diode

  • Author

    Chen, Wen-Ray ; Shih, Neng-Chi ; Juang, Fuh-Shyang

  • Author_Institution
    Department of Electrical Engineering, Southern Taiwan University of Technology, Tainan, Taiwan 710, R.O.C. Phone:+886-6-2533131 EXT 3328 E-mail: chenwr@mail.stut.edu.tw
  • fYear
    2005
  • fDate
    30-02 Aug. 2005
  • Firstpage
    912
  • Lastpage
    913
  • Abstract
    Si3N4and SiO2layers were deposited onto the organic light-emitting diodes as a passivation layer to prevent the moisture and oxygen that degraded the OLED performance. Current-voltage (I-V), luminescence-voltage (L-V), and lifetime were measured and discussed. It was found that OLED passivated by a 100nm-thick SiO2has a larger lifetime and that passivated by Si3N4layer has a shorter lifetime due to the large plasma power damaging the sample surface.
  • Keywords
    OLED; passivation; Glass; Indium tin oxide; Moisture; Organic light emitting diodes; Passivation; Plasma devices; Plasma displays; Plasma measurements; Radio frequency; Thermal degradation; OLED; passivation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
  • Print_ISBN
    0-7803-9242-6
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2005.1569600
  • Filename
    1569600
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2923946