Title :
Physical properties of RT-LPCVD and LPCVD polysilicon thin films: application to emitter solar cell
Author :
Lemiti, M. ; Semmache, B. ; Le, Q.N. ; Barbier, D. ; Laugier, A.
Author_Institution :
Inst. Nat. des Sci. Appliquees, Villeurbanne, France
Abstract :
This investigation was implemented in the framework of a novel all-low thermal budget polysilicon emitter solar cells fabrication technology. A comparative study of structural and electrical properties of thin silicon layers deposited by silane pyrolysis in a classical hot-wall furnace (LPCVD) and a cold-wall RTP reactor (RT-LPCVD) has been made. Deposition conditions and rapid thermal anneals were varied in order to improve the physical properties of RT-LPCVD polysilicon films. The structural properties have been characterized by means of grazing X-ray diffraction and cross-sectional TEM analysis. Sheet resistivity measurements performed on POCl3-doped and subsequently rapid thermal annealed films showed the feasibility of low resistivity films particularly when the polysilicon layers are initially deposited in the amorphous state. Finally, RTCVD polysilicon emitter solar cells with various thicknesses were tested by spectral photo-response analysis
Keywords :
CVD coatings; X-ray diffraction; chemical vapour deposition; electrical resistivity; elemental semiconductors; semiconductor device testing; semiconductor growth; semiconductor thin films; silicon; solar cells; transmission electron microscopy; LPCVD thin film semiconductors; POCl3; Si; classical hot-wall furnace; cross-sectional TEM analysis; deposition conditions; electrical properties; emitter solar cells fabrication; grazing X-ray diffraction; poly-Si solar cells; pyrolysis; rapid thermal anneals; sheet resistivity measurements; spectral photo-response analysis; structural properties; Conductivity measurement; Fabrication; Furnaces; Inductors; Performance evaluation; Photovoltaic cells; Rapid thermal annealing; Silicon; Transistors; X-ray diffraction;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520203
