Thin film polycrystalline Si by a novel solution growth technique [for solar cells]

Author

Wallace, Richard L. ; Anderson, Wayne A. ; Jones, K.M.

Author_Institution

Dept. of Electr. & Comput. Eng., State Univ. of New York, Buffalo, NY, USA

Volume

2

fYear

1994

fDate

5-9 Dec 1994

Firstpage

1379

Abstract

A solution growth technique has been developed capable of depositing large grain (up to 20-30 μm) Si films at temperatures no higher than 650°C for application as the base in a-Si:H/poly-Si heterojunction solar cells. XRD analysis of the deposited films show a strong (111) preferred orientation, depending on the use of a wetting agent during growth. A well-defined grain structure is seen by SEM examination. Films deposited using an In-Si solution are p-type; those from Sn-Si solutions are n-type. Carrier concentrations range from the low 10¹⁶ cm to the mid 10¹⁷ cm range. Conductivities as high as 0.2 (Ω cm)^-1 were measured. Hall effect measurements showed hole mobilities as high as ~30 cm² V^-1 s^-1. Photoresponse is reduced for films deposited with a wetting agent

Keywords

X-ray diffraction; carrier density; crystal growth from solution; crystal microstructure; elemental semiconductors; hole mobility; scanning electron microscopy; semiconductor device testing; semiconductor growth; semiconductor thin films; silicon; solar cells; texture; 0.2 (ohmcm)^-1; 20 to 30 mum; Hall effect measurements; SEM examination; Si:H-Si; XRD analysis; a-Si:H/poly-Si heterojunction solar cells; carrier concentrations; grain structure; hole mobilities; large grain film deposition; photoresponse; solution growth technique; strong (111) preferred orientation; thin film polycrystalline semiconductor; wetting agent; Costs; Glass; Scanning electron microscopy; Semiconductor films; Semiconductor thin films; Sputtering; Substrates; Surface morphology; Temperature; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520204

Filename

520204