Title :
Preferentially-oriented polycrystalline Si growth for thin film solar cells using SiH2Cl2 decomposed in plasma
Author :
Fuyuki, Takashi ; Yoshida, Hiroyasu ; Matsunami, Hiroyuki
Author_Institution :
Dept. of Electr. Eng., Kyoto Univ., Japan
Abstract :
Polycrystalline Si growth on foreign substrates was carried out by plasma enhanced CVD using dichlorosilane (SiH2Cl2). Preferentially oriented polycrystalline Si films suitable for thin film solar cells could be achieved at a substrate temperature of 750~800°C with a reasonable deposition rate. Effects of plasma decomposition of the source gas were discussed relating to preferential orientation and deposition rates
Keywords :
elemental semiconductors; plasma CVD; plasma CVD coatings; semiconductor device testing; semiconductor growth; semiconductor thin films; silicon; solar cells; substrates; texture; 750 to 800 C; Si; SiH2Cl2; deposition rates; foreign substrates; plasma decomposition; plasma enhanced CVD; polycrystalline semiconductor growth; preferential orientation; substrate temperature; thin film solar cells; Crystallization; Distributed control; Hydrogen; Photovoltaic cells; Plasma applications; Plasma sources; Plasma temperature; Semiconductor films; Semiconductor thin films; Substrates;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520205
