• DocumentCode
    2923975
  • Title

    Preferentially-oriented polycrystalline Si growth for thin film solar cells using SiH2Cl2 decomposed in plasma

  • Author

    Fuyuki, Takashi ; Yoshida, Hiroyasu ; Matsunami, Hiroyuki

  • Author_Institution
    Dept. of Electr. Eng., Kyoto Univ., Japan
  • Volume
    2
  • fYear
    1994
  • fDate
    5-9 Dec 1994
  • Firstpage
    1383
  • Abstract
    Polycrystalline Si growth on foreign substrates was carried out by plasma enhanced CVD using dichlorosilane (SiH2Cl2). Preferentially oriented polycrystalline Si films suitable for thin film solar cells could be achieved at a substrate temperature of 750~800°C with a reasonable deposition rate. Effects of plasma decomposition of the source gas were discussed relating to preferential orientation and deposition rates
  • Keywords
    elemental semiconductors; plasma CVD; plasma CVD coatings; semiconductor device testing; semiconductor growth; semiconductor thin films; silicon; solar cells; substrates; texture; 750 to 800 C; Si; SiH2Cl2; deposition rates; foreign substrates; plasma decomposition; plasma enhanced CVD; polycrystalline semiconductor growth; preferential orientation; substrate temperature; thin film solar cells; Crystallization; Distributed control; Hydrogen; Photovoltaic cells; Plasma applications; Plasma sources; Plasma temperature; Semiconductor films; Semiconductor thin films; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
  • Conference_Location
    Waikoloa, HI
  • Print_ISBN
    0-7803-1460-3
  • Type

    conf

  • DOI
    10.1109/WCPEC.1994.520205
  • Filename
    520205
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2923975