Numerical analysis of silicon-on-insulator thin-film solar cells

Author

Iwata, Hideyuki ; Ohzone, Takashi ; Takakura, Hideyuki

Author_Institution

Dept. of Electron. & Inf., Toyama Prefectural Univ., Japan

Volume

2

fYear

1994

fDate

5-9 Dec 1994

Firstpage

1437

Abstract

The property of thin-film single-crystalline silicon solar cells fabricated on the SOI substrate has been investigated through two-dimensional numerical device simulation. The SOI film/buried SiO₂ interface condition is changed by back-gate biases. When the bottom region of the SOI film is accumulated by applying large back-gate bias, conversion efficiency is improved compared to the zero back-gate bias case. However, sufficiently high conversion efficiency cannot be obtained by using the conventional structure. Two proposals to increase the conversion efficiency of SOI thin-film solar cell are presented. A conversion efficiency of about 24 percent can be realized for the improved cell if the complete optical confinement is assumed

Keywords

elemental semiconductors; numerical analysis; semiconductor device models; semiconductor thin films; silicon; silicon-on-insulator; solar cells; substrates; 24 percent; 2D numerical device simulation; SOI substrate; Si; SiO₂; back-gate biases; conversion efficiency; optical confinement; semiconductor; silicon-on-insulator; thin-film solar cells; Numerical analysis; Numerical simulation; Optical films; Photovoltaic cells; Proposals; Semiconductor thin films; Silicon on insulator technology; Substrates; Thin film devices; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520219

Filename

520219