Bias-dependent tunable response of normal incidence long wave infrared quantum dot detectors

Author

Krishna, S. ; Rotella, P. ; Raghavan, S. ; Stintz, A. ; Hayat, M. ; Tyo, S.J. ; Kennerly, S.W.

Author_Institution

Dept. of Electr. Eng. & Comput. Eng., New Mexico Univ., Albuquerque, NM, USA

Volume

2

fYear

2002

fDate

10-14 Nov. 2002

Firstpage

754

Abstract

We report development of array compatible individual high-performance quantum dot pixel structures that allow for spectral tuning by the application of an external bias. Custom-made post-processing algorithms have been used to further enhance and optimize their tuning and spectral-separation capability far beyond the device limit. The dots-in-a-well (DWELL) detector consists of 10 layers of InAs dots placed in a thin InGaAs well, which in turn is placed in a GaAs matrix. The DWELL structure provides good confinement for the carriers trapped in the quantum dots.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; optical tuning; quantum well devices; semiconductor quantum dots; DWELL detector; DWELL structure; GaAs matrix; InAs; InGaAs; bias-dependent tunable response; custom-made post-processing algorithms; dots-in-a-well detector; normal incidence long wave infrared quantum dot detectors; quantum dot pixel structures; spectral-separation capability; thin InGaAs well; Electron devices; Gallium arsenide; Infrared detectors; Infrared sensors; Laboratories; Quantum dots; Shape; Temperature; US Department of Transportation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1159526

Filename

1159526