DocumentCode
2924308
Title
Hafnium carbide CFE, TFE, and schottky electron sources
Author
Mackie, William A. ; Lovell, Josh M. ; Magera, Gerald G.
Author_Institution
Appl. Phys. Technol., Inc., McMinnville, OR, USA
fYear
2012
fDate
24-26 April 2012
Firstpage
129
Lastpage
130
Abstract
We report on CFE and TFE cathodes using (310) oriented hafnium carbide. These have been operated in UHV and temperatures from 300 K to 1900 K. Emission data show dramatic increases while operating at elevated temperatures due to work function lowering. Artificial faceting using FIB techniques shows promise for this cathode operating in Schottky emission mode.
Keywords
Schottky effect; cathodes; electron field emission; electron sources; focused ion beam technology; hafnium compounds; CFE cathode; CFE electron source; FIB technique; HfC; Schottky electron source; Schottky emission mode; TFE cathode; TFE electron source; artificial faceting; cold field emission; temperature 300 K to 1900 K; thermal-field emission; Cathodes; Electron sources; Hafnium; Hybrid fiber coaxial cables; Surface cleaning; Surface contamination; Temperature distribution; Schottky emission; carbide; cold field emission; electron source; hafnium carbide; thermal field emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electron Sources Conference (IVESC), 2012 IEEE Ninth International
Conference_Location
Monterey, CA
Print_ISBN
978-1-4673-0368-2
Type
conf
DOI
10.1109/IVESC.2012.6264168
Filename
6264168
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