• DocumentCode
    2924316
  • Title

    Stable field emission from nanoporous silicon carbide

  • Author

    Kang, Myung-Gyu ; Lezec, Henri J. ; Kallaher, Raymond L. ; Sharifi, Fred

  • Author_Institution
    Center for Nanoscale Sci. & Technol., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
  • fYear
    2012
  • fDate
    24-26 April 2012
  • Firstpage
    135
  • Lastpage
    135
  • Abstract
    We report on a new type of cold cathode field emission electron source capable of extremely high emission, producing current densities at levels comparable to thermal sources. Record stable emission in excess of 6 A/cm2 at 7.5 V/μm and a maximum current density of 11 A/cm2 at 9.0 V/μm are demonstrated. The emitter is a unique structure, comprised of a monolithic and rigid nanostructured foam with homogenously distributed emission sites. The fabrication process is simple and scalable, as it consists of wet chemistry and ion etching and does not require high temperature gas phase synthesis. Electric field enhancement is tunable and is set by a two-level hierarchy consisting of local nanostructure morphology and the macroscopic shape.
  • Keywords
    current density; field emitter arrays; foams; nanofabrication; nanoporous materials; silicon compounds; sputter etching; wide band gap semiconductors; SiC; cold cathode field emission electron source; current density; electric field enhancement; field emitter arrays; high-field emission stability; homogenously distributed emission sites; ion etching; macroscopic shape; monolithic emitter structure; nanoporous silicon carbide; nanostructure morphology; rigid nanostructured foam; thermal source; two-level hierarchy; wet chemistry; Cathodes; Current density; Educational institutions; Etching; Fabrication; Reliability; Silicon carbide; Field Emission; Nanotechnology; silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electron Sources Conference (IVESC), 2012 IEEE Ninth International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4673-0368-2
  • Type

    conf

  • DOI
    10.1109/IVESC.2012.6264169
  • Filename
    6264169