Development of Geiger-mode APD arrays for 1.06 μm

Author

McIntosh, K.A. ; Donnelly, J.P. ; Oakley, D.C. ; Napoleone, A. ; Calawa, S.D. ; Mahoney, LJ ; Molvar, K.M. ; Duerr, E.K. ; Shaver, D.C.

Author_Institution

Lincoln Lab., MIT, Lexington, MA, USA

Volume

2

fYear

2002

fDate

10-14 Nov. 2002

Firstpage

760

Abstract

InGaAsP/InP Geiger-mode avalanche photodiodes (APDs) have been demonstrated with low dark count rates and high photon sensitivity at 1.06 μm. APD arrays can be operated with a common bias voltage with excellent uniformity of response and dark count rates. By cooling, the dark count rates can be reduced from ∼1 MHz at room temperature to ∼35 kHz at 210 K. This operating temperature range is achievable with TE-coolers and should enable new active-imaging applications.

Keywords

Geiger counters; III-V semiconductors; adaptive optics; avalanche photodiodes; dark conductivity; gallium arsenide; gallium compounds; indium compounds; infrared detectors; photon counting; 1.06 micron; 210 K; Geiger-mode APD arrays; IR detectors; InGaAsP-InP; InGaAsP/InP Geiger-mode APDs; InGaAsP/InP Geiger-mode avalanche photodiodes; active-imaging applications; common bias voltage; high photon sensitivity; low dark count rates; operating temperature; response uniformity; room temperature; Breakdown voltage; Chemical elements; Cooling; Dark current; Detectors; Indium phosphide; Polyimides; Sensor arrays; Temperature; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1159529

Filename

1159529