Title :
Investigations of secondary electron emission from boron doped diamond films grown by MPCVD
Author :
Ding, Ming Q. ; Li, Lili ; Feng, Jinjun ; Gao, Yujuan ; Chen, Qilue ; Shao, Wensheng
Author_Institution :
Nat. Key Lab. of Sci. & Technol. on Vacuum Electron., Beijing Vacuum Electron. Res. Inst., Beijing, China
Abstract :
A high secondary yield of 18.3 at 1KeV primary beam energy was found, with the B-doped diamond sample left in air for weeks and subject to no treatment prior to the measurement. Oxidation treatment destroys negative electron affinity (NEA) whereas heating in vacuum substantially regains NEA.
Keywords :
boron; diamond; heat treatment; oxidation; plasma CVD; secondary electron emission; semiconductor doping; semiconductor growth; semiconductor materials; semiconductor thin films; C:B; MPCVD; boron doped diamond films; electron volt energy 18.3 keV; high-secondary yield; microwave plasma chemical vapor deposition; negative electron affinity; oxidation; p-type semiconductor materials; primary beam energy; secondary electron emission; vacuum heating; Diamond-like carbon; Electron emission; Films; Heat treatment; Oxidation; Plasmas; Vacuum technology; B-doped diamond films; Secondary electron emission (SEE) yield; negative electron affinity (NEA);
Conference_Titel :
Vacuum Electron Sources Conference (IVESC), 2012 IEEE Ninth International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-0368-2
DOI :
10.1109/IVESC.2012.6264187
