Investigations of secondary electron emission from boron doped diamond films grown by MPCVD

Author

Ding, Ming Q. ; Li, Lili ; Feng, Jinjun ; Gao, Yujuan ; Chen, Qilue ; Shao, Wensheng

Author_Institution

Nat. Key Lab. of Sci. & Technol. on Vacuum Electron., Beijing Vacuum Electron. Res. Inst., Beijing, China

fYear

2012

fDate

24-26 April 2012

Firstpage

313

Lastpage

314

Abstract

A high secondary yield of 18.3 at 1KeV primary beam energy was found, with the B-doped diamond sample left in air for weeks and subject to no treatment prior to the measurement. Oxidation treatment destroys negative electron affinity (NEA) whereas heating in vacuum substantially regains NEA.

Keywords

boron; diamond; heat treatment; oxidation; plasma CVD; secondary electron emission; semiconductor doping; semiconductor growth; semiconductor materials; semiconductor thin films; C:B; MPCVD; boron doped diamond films; electron volt energy 18.3 keV; high-secondary yield; microwave plasma chemical vapor deposition; negative electron affinity; oxidation; p-type semiconductor materials; primary beam energy; secondary electron emission; vacuum heating; Diamond-like carbon; Electron emission; Films; Heat treatment; Oxidation; Plasmas; Vacuum technology; B-doped diamond films; Secondary electron emission (SEE) yield; negative electron affinity (NEA);

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electron Sources Conference (IVESC), 2012 IEEE Ninth International

Conference_Location

Monterey, CA

Print_ISBN

978-1-4673-0368-2

Type

conf

DOI

10.1109/IVESC.2012.6264187

Filename

6264187