Efficient high-temperature CW operation of oxide-confined long-wavelength InAs quantum dot lasers

Summary form only given. Intensive research has been conducted in improving the performance of quantum dot (QD) lasers. We describe the achievement of efficient CW lasing at /spl lambda//spl ap/1.28 /spl mu/m by narrow-stripe, laterally-oxide-confined QD lasers containing two InAs quantum dot-in-well (DWELL) layers, with very low threshold current density (24 A/cm/sup 2/), high differential efficiency (55%), and a wide temperature range for CW operation (T/sub max/>100/spl deg/C). The QD laser was grown by solid-source MBE and has an oxide-confined device structure. The active region consists of two InAs DWELL layers separated by a 30 nm GaAs barrier layer, which is situated in the middle of a 220 nm thick GaAs waveguide bounded by AlGaAs cladding layers.