p-n junction formation in 3- and 4-inch indium gallium arsenide epitaxial wafers using a doped glass diffusion source

Author

Lange, M.J. ; Dixon, P. ; Olfsen, G.H.

Author_Institution

Sensors Unlimited Inc., Princeton, NJ, USA

fYear

2000

fDate

7-12 May 2000

Firstpage

351

Lastpage

352

Abstract

Summary form only given. Indium gallium arsenide (InGaAs) focal plane arrays (FPAs) are finding increasing use in diverse spectroscopic and imaging applications such as wavelength division multiplexing (WDM), night vision, and the differentiation of clear ice from water on aircraft surfaces and roadways. InGaAs optoelectronic devices are currently produced using epitaxial structures grown on 2-inch diameter indium phosphide (InP) substrates. High volumes and large die sizes (greater than 1/spl times/1 cm) are driving a demand for 3- and 4-inch wafers. We report a novel approach to the formation of the p-n junctions of InGaAs/InP p-i-n photodiodes.

Keywords

III-V semiconductors; focal planes; gallium arsenide; indium compounds; optical arrays; optical fabrication; p-i-n photodiodes; p-n heterojunctions; photodetectors; semiconductor epitaxial layers; 2 in; 3 in; 4 in; InGaAs optoelectronic devices; InGaAs-InP; InGaAs/InP p-i-n photodiodes; WDM; aircraft surfaces; clear ice; doped glass diffusion source; epitaxial structures; epitaxial wafer; focal plane arrays; imaging applications; night vision; p-n junction formation; p-n junctions; roadways; spectroscopic applications; water; wavelength division multiplexing; Aircraft; Ice surface; Indium gallium arsenide; Indium phosphide; Night vision; Optoelectronic devices; P-n junctions; Spectroscopy; Surface waves; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-634-6

Type

conf

DOI

10.1109/CLEO.2000.907103

Filename

907103