Title :
p-n junction formation in 3- and 4-inch indium gallium arsenide epitaxial wafers using a doped glass diffusion source
Author :
Lange, M.J. ; Dixon, P. ; Olfsen, G.H.
Author_Institution :
Sensors Unlimited Inc., Princeton, NJ, USA
Abstract :
Summary form only given. Indium gallium arsenide (InGaAs) focal plane arrays (FPAs) are finding increasing use in diverse spectroscopic and imaging applications such as wavelength division multiplexing (WDM), night vision, and the differentiation of clear ice from water on aircraft surfaces and roadways. InGaAs optoelectronic devices are currently produced using epitaxial structures grown on 2-inch diameter indium phosphide (InP) substrates. High volumes and large die sizes (greater than 1/spl times/1 cm) are driving a demand for 3- and 4-inch wafers. We report a novel approach to the formation of the p-n junctions of InGaAs/InP p-i-n photodiodes.
Keywords :
III-V semiconductors; focal planes; gallium arsenide; indium compounds; optical arrays; optical fabrication; p-i-n photodiodes; p-n heterojunctions; photodetectors; semiconductor epitaxial layers; 2 in; 3 in; 4 in; InGaAs optoelectronic devices; InGaAs-InP; InGaAs/InP p-i-n photodiodes; WDM; aircraft surfaces; clear ice; doped glass diffusion source; epitaxial structures; epitaxial wafer; focal plane arrays; imaging applications; night vision; p-n junction formation; p-n junctions; roadways; spectroscopic applications; water; wavelength division multiplexing; Aircraft; Ice surface; Indium gallium arsenide; Indium phosphide; Night vision; Optoelectronic devices; P-n junctions; Spectroscopy; Surface waves; Wavelength division multiplexing;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.907103
