Title :
Fabrication of Al2O3–Mullite–AlN Multiphase Ceramic Layer on W–Cu Substrates for Power Semiconductor Packaging
Author :
Jiandong Zhu ; Rong An ; Chunqing Wang ; Guangwu Wen
Author_Institution :
State Key Lab. of Adv. Welding & Joining, Harbin Inst. of Technol., Harbin, China
Abstract :
This paper proposes a novel method to manufacture ceramic insulated metal substrate for power semiconductor modules and high-temperature electronics. α-Al2O3-mullite (Al6Si2O13)-AlN multiphase ceramic layer was fabricated on W80Cu20/Cr substrate at 1050 °C by firing. The polycarbosilaneAlN green ceramic layer was synthesized by spin processor, and then was fired under a steady flow of wet nitrogen Al-Si-O nanocrystalline rods were formed and their diameters were about 100 nm. The α-Al2O3-mullite-AlN multiphase ceramic layer had perfect interface bonding, and exhibited superior mechanical properties and thermal shock resistance.
Keywords :
aluminium compounds; ceramic insulation; copper; firing (materials); high-temperature electronics; modules; power semiconductor devices; semiconductor device packaging; substrates; tungsten; Al-Si-O; Al2O3; Al6Si2O13; AlN; W-Cu; ceramic insulated metal substrate; firing; high-temperature electronics; interface bonding; mechanical property; mullite; multiphase ceramic layer fabrication; nanocrystalline rod; polycarbosilane-aluminum nitride green ceramic layer; power semiconductor module; power semiconductor packaging; spin processor; temperature 1050 C; thermal shock resistance; tungsten-copper substrate; wet nitrogen; Ceramics; Electric shock; III-V semiconductor materials; Metals; Morphology; Substrates; $alpha $ -Al2O3???mullite???AlN; α-Al₂O₃-mullite-AlN; ceramic insulated metal substrate (IMS); high-temperature electronics; power semiconductor module; power semiconductor module.;
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
DOI :
10.1109/TCPMT.2014.2375316
