Broadening mechanisms, gain, and low linewidth enhancement factor in InAs quantum-dot lasers

Author

Newell, T.C. ; Li, H. ; Eliseev, P. ; Liu, G.T. ; Stintz, A. ; Malloy, K.J. ; Lester, L.F.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

fYear

2000

fDate

7-12 May 2000

Firstpage

363

Abstract

Summary form only given. A detailed understanding of many optical characteristics of quantum dot lasers remains in a nascent stage. However, its density of states function suggests many intriguing features. Here we present experimental investigations of homogeneous broadening, gain, and linewidth enhancement factor measurements in quantum dot laser diodes. A gain model that describes the evolution of the emission spectra along with subsidiary mode suppression is also presented.

Keywords

III-V semiconductors; indium compounds; infrared spectra; quantum well lasers; semiconductor quantum dots; spectral line breadth; InAs; InAs quantum-dot lasers; broadening mechanism; density of states function; emission spectra; homogeneous broadening; linewidth enhancement factor measurements; low linewidth enhancement factor; nascent stage; optical characteristics; quantum dot laser diodes; subsidiary mode suppression; Artificial intelligence; Bandwidth; Diode lasers; Gratings; Laser modes; Optical waveguides; Optimized production technology; Polarization; Quantum dot lasers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-634-6

Type

conf

DOI

10.1109/CLEO.2000.907121

Filename

907121