DocumentCode :
2925255
Title :
High characteristic temperature of near 1.3-/spl mu/m InGaAs/GaAs quantum-dot lasers
Author :
Mukai, Koji ; Nakata, Y. ; Otsubo, K. ; Sugawara, Mariko ; Yokoyama, Naoki ; Ishikawa, Hiroshi
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fYear :
2000
fDate :
7-12 May 2000
Firstpage :
363
Lastpage :
364
Abstract :
Summary form only given.Quantum-dot lasers are expected to attain remarkable reduction in threshold current and temperature-insensitive operation, however, high characteristic temperature of threshold current (T/sub 0/) has nor yet been achieved except lasers which required huge current injection. For example, the dot lasers with low threshold current density or currents close to 10 mA have T/sub 0/ of 40-80 K. In this paper, we report T/sub 0/ of 120 K in near-1.3-/spl mu/m InGaAs-GaAs quantum-dot lasers having a threshold current of 13 mA at room temperature. The ground-level lasing occurred up to 100/spl deg/C. We compared the optical properties of the lasers with those of other dot lasers to indicate what were the key points for the achievements.
Keywords :
Debye temperature; III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; semiconductor quantum dots; 1.3 mum; 10 mA; 100 C; 13 mA; 40 to 80 K; InGaAs-GaAs; InGaAs-GaAs quantum-dot lasers; InGaAs/GaAs quantum-dot lasers; high characteristic temperature; huge current injection; low threshold current density; optical properties; temperature-insensitive operation; threshold current; Bandwidth; Diode lasers; Gallium arsenide; Indium gallium arsenide; Laser modes; Optical waveguides; Optimized production technology; Polarization; Quantum dot lasers; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
Type :
conf
DOI :
10.1109/CLEO.2000.907122
Filename :
907122
Link To Document :
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