High characteristic temperature of near 1.3-/spl mu/m InGaAs/GaAs quantum-dot lasers

Author

Mukai, Koji ; Nakata, Y. ; Otsubo, K. ; Sugawara, Mariko ; Yokoyama, Naoki ; Ishikawa, Hiroshi

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

2000

fDate

7-12 May 2000

Firstpage

363

Lastpage

364

Abstract

Summary form only given.Quantum-dot lasers are expected to attain remarkable reduction in threshold current and temperature-insensitive operation, however, high characteristic temperature of threshold current (T/sub 0/) has nor yet been achieved except lasers which required huge current injection. For example, the dot lasers with low threshold current density or currents close to 10 mA have T/sub 0/ of 40-80 K. In this paper, we report T/sub 0/ of 120 K in near-1.3-/spl mu/m InGaAs-GaAs quantum-dot lasers having a threshold current of 13 mA at room temperature. The ground-level lasing occurred up to 100/spl deg/C. We compared the optical properties of the lasers with those of other dot lasers to indicate what were the key points for the achievements.

Keywords

Debye temperature; III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; semiconductor quantum dots; 1.3 mum; 10 mA; 100 C; 13 mA; 40 to 80 K; InGaAs-GaAs; InGaAs-GaAs quantum-dot lasers; InGaAs/GaAs quantum-dot lasers; high characteristic temperature; huge current injection; low threshold current density; optical properties; temperature-insensitive operation; threshold current; Bandwidth; Diode lasers; Gallium arsenide; Indium gallium arsenide; Laser modes; Optical waveguides; Optimized production technology; Polarization; Quantum dot lasers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-634-6

Type

conf

DOI

10.1109/CLEO.2000.907122

Filename

907122