Temperature dependence of the carrier capture mechanism in InAs quantum dots

Author

Popescu, Dan P. ; Stintz, A. ; Liu, G.T. ; Malloy, K.J.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

fYear

2000

fDate

7-12 May 2000

Firstpage

364

Abstract

Summary form only given. Photoluminescence emission from InAs quantum dots in a strained In/sub 0.15/Ga/sub 0.85/As quantum well grown on GaAs has been investigated over a temperature range from 10 to 300 K. Emission has been obtained by pumping the sample with a 815 nm radiation from a Ti-doped sapphire laser with low intensity such that the electron-hole pairs generated occupy less than 5% of the number of quantum dots. For these pumping conditions recombination emission has not been observed from either the GaAs substrate and cap or from the In/sub 0.15/Ga/sub 0.85/As quantum well.

Keywords

III-V semiconductors; carrier mobility; indium compounds; optical pumping; photoluminescence; semiconductor quantum dots; 10 to 300 K; 815 nm; GaAs substrate; In/sub 0.15/Ga/sub 0.85/As; In/sub 0.15/Ga/sub 0.85/As quantum well; InAs; InAs quantum dots; Ti-doped sapphire laser; carrier capture mechanism; electron-hole pairs generation; low intensity; photoluminescence emission; pumping conditions; quantum dots; recombination emission; strained In/sub 0.15/Ga/sub 0.85/As quantum well; temperature dependence; temperature range; Gallium arsenide; Laser excitation; Photoluminescence; Pump lasers; Quantum dot lasers; Quantum dots; Quantum well lasers; Radiative recombination; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-634-6

Type

conf

DOI

10.1109/CLEO.2000.907123

Filename

907123