DocumentCode :
2925278
Title :
Influence of cap layer on interdiffusion in InP/InGaAs quantum wells
Author :
Carmody, C. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Volume :
2
fYear :
2002
fDate :
10-14 Nov. 2002
Firstpage :
845
Abstract :
Summary form only given. Shallow ion implantation was used to study the effect of cap layer and implant temperature in the InP/InGaAs quantum well system. The greatest shifts occur at a dose of 1×1014 cm-2, at 200 °C for the InP capped sample and at room temperature for the InGaAs capped sample.
Keywords :
III-V semiconductors; chemical interdiffusion; gallium arsenide; indium compounds; integrated optics; ion implantation; photoluminescence; semiconductor quantum wells; spectral line shift; 200 C; 25 C; InGaAs capped sample; InP capped sample; InP-InGaAs; InP/InGaAs quantum wells; InP:Fe; PL energy shift; cap layer; low temperature photoluminescence spectra; photonic device integration; quantum well interdiffusion; semi insulating InP:Fe substrates; Implants; Impurities; Indium gallium arsenide; Indium phosphide; Laser tuning; Optical device fabrication; Photonic band gap; Quantum well lasers; Rapid thermal annealing; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
ISSN :
1092-8081
Print_ISBN :
0-7803-7500-9
Type :
conf
DOI :
10.1109/LEOS.2002.1159572
Filename :
1159572
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2925278
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