Energy relaxation and recombination in 1.3-micron-wavelength, self-assembled, InGaAs/GaAs quantum dots

Author

Boggess, T.F. ; Zhang, L. ; Flatte, M.E. ; Deppe, D.G. ; Huffaker, D.L. ; Shchekin, O.B. ; Cao, C.

Author_Institution

Dept. of Phys. & Astron., Iowa Univ., Iowa City, IA, USA

fYear

2000

fDate

7-12 May 2000

Firstpage

366

Lastpage

367

Abstract

Summary form only given.We report ultrafast time-resolved photoluminescence (PL) upconversion measurements of the carrier energy relaxation and carrier recombination in 1.3 /spl mu/m-wavelength, selfassembled, InGaAs-GaAs QDs. Results are described for temperatures ranging from 10-300 K and for excitation photon energies both above and within the wetting layer.

Keywords

III-V semiconductors; carrier mobility; gallium arsenide; indium compounds; photoluminescence; self-assembly; semiconductor quantum dots; time resolved spectra; 1.3 mum; 10 to 300 K; InGaAs-GaAs; InGaAs/GaAs quantum dots; carrier energy relaxation; carrier recombination; energy recombination; energy relaxation; excitation photon energies; self-assembled; ultrafast time-resolved photoluminescence upconversion measurements; wetting layer; Atomic measurements; Cities and towns; Delay; Filling; Gallium arsenide; Indium gallium arsenide; Physics; Quantum dots; Radiative recombination; Stationary state;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-634-6

Type

conf

DOI

10.1109/CLEO.2000.907126

Filename

907126