Title :
18.5: Development of an S-band, 200 MHz instantaneous bandwidth, 22 kW average power klystron
Author :
Zhao-Chuan Zhang ; Bao-li Shen ; Chun-jiu Fu ; Xiao-juan Yu ; Feng Zhang ; Yun-ping Huang
Author_Institution :
Key Lab. of High Power Microwave Sources & Technol., Chinese Acad. of Sci., Beijing, China
Abstract :
This paper reports the design considerations, simulation results and test specifications of an S-band, 200 MHz instantaneous bandwidth, 22 kW average power klystron, which was developed by the Institute of Electronics, Chinese Academy of Sciences (IECAS) before Dec., 2009. The overlapping mode technology is adopted in the output section to provide appropriate interaction impedance within the confines of the required bandwidth. The typical result is a more than 1.1 MW peak output power with a 67 μs RF pulse width, a 300 Hz repetition rate, and the output power fluctuation is less than 1.2 dB at the same input power.
Keywords :
klystrons; Institute of Electronics Chinese Academy of Sciences; S-band; frequency 200 MHz; instantaneous bandwidth; interaction impedance; klystron; overlapping mode technology; power 22 kW; Bandwidth; Cathodes; Electron beams; Electronic equipment testing; Impedance; Klystrons; Laboratories; Power generation; Radio frequency; Space vector pulse width modulation; 200 MHz instantaneous bandwidth; 22 kW average power; Design considerations; S-band; Test specifications; overlapping mode;
Conference_Titel :
Vacuum Electronics Conference (IVEC), 2010 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-7098-3
DOI :
10.1109/IVELEC.2010.5503445