The JCT buried BSF silicon solar cell a model of simplicity and high efficiency

The term BSF is defined as an electric field region created by diffusion of a dopant of the same type as present in the base region of a solar cell into the back surface of the cell. The buried BSF is then defined as a BSF buried beneath a heavily doped, multicrystalline, silicon-silicon oxide layer. A simple process for fabricating a buried BSF and an optimum emitter for an n⁺, p, p⁺ silicon solar cell is described. The buried BSF, at present, provides 0.63 volt Voc, under AM1 illumination, and 1000 μm base minority carrier diffusion length when made in 100 ohm cm silicon. An attempt is being made to utilize the buried BSF to achieve a useful high efficiency cell, possessing long term reliability and acceptable manufacturing cost