DocumentCode :
2925658
Title :
Diode-pumped passively Q-switched high-brightness microchip lasers
Author :
Sakai, Hiroshi ; Sone, Akihiro ; Kan, Hirohumi ; Taira, Takunori
Author_Institution :
Central Research Laboratory, Hamamatsu Photonics K. K., Japan, h-sakai@crl.hpk.co.jp
fYear :
2005
fDate :
30-02 Aug. 2005
Firstpage :
1246
Lastpage :
1247
Abstract :
We have demonstrated the diode end-pumped high-brightness Nd3+:YAG microchip lasers, passively Q-switched by Cr4+:YAG as a saturable absorber (SA). In order to optimize the output characteristic of the laser, we have investigated the transmission of Cr4+:YAG, and acquired the dependence of the pulse energy density on the initial transmission with the final transmission that was provided from the measurement. As a result, its maximum output pulse energy was 0.95 mJ with the pulse width of 480 ps and the peak power was 1.7 MW and a beam quality was M2= 1.05 with 100 Hz repetition frequency.
Keywords :
Chromium; Density measurement; Diodes; Energy measurement; Frequency; Microchip lasers; Neodymium; Optical pulses; Pulse measurements; Space vector pulse width modulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN :
0-7803-9242-6
Type :
conf
DOI :
10.1109/CLEOPR.2005.1569709
Filename :
1569709
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2925658
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