Fast-switching symmetric self-electrooptic-effect device at 865 nm

Author

Serkland, D.K. ; Fritz, L.J. ; Sullivan, C.T. ; Burkhart, J.H. ; Klem, J.F.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

fYear

2000

fDate

7-12 May 2000

Firstpage

381

Lastpage

382

Abstract

Summary form only given.Although the symmetric self-electrooptic-effect device (S-SEED) may not be as fast as recent all-optical switches, it retains the advantages of low-power consumption, low latency, cascadeability, and wafer-scale fabrication. We have fabricated 865-nm S-SEED devices designed for fast switching speed. The key elements are extremely shallow quantum wells, low spreading-resistance layers, and low-resistance ohmic contacts. We observed a rapid switching transition (6 ps) with about 20% ringing.

Keywords

III-V semiconductors; SEEDs; capacitance; excitons; gallium arsenide; quantum well devices; semiconductor quantum wells; 6 ps; 865 nm; GaAs; S-SEED; all-optical switches; cascadeability; extremely shallow quantum wells; fast switching speed; fast-switching symmetric self-electrooptic-effect device; low latency; low spreading-resistance layers; low-power consumption; low-resistance ohmic contacts; rapid switching transition; symmetric self-electrooptic-effect device; wafer-scale fabrication; Diodes; Doping; High speed optical techniques; Optical control; Optical devices; Optical pulses; Optical pumping; Paints; Probes; Thickness control;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-634-6

Type

conf

DOI

10.1109/CLEO.2000.907148

Filename

907148