Tl-containing semiconductors for temperature-insensitive wavelength semiconductor lasers

Author

Asahi, H. ; Lee, H.-J. ; Fujiwara, A. ; Imada, A. ; Zhou, Y.K.

Author_Institution

Inst. of Sci. & Ind. Res., Osaka Univ., Japan

Volume

2

fYear

2002

fDate

10-14 Nov. 2002

Firstpage

889

Abstract

LDs in WDM systems must be equipped with Peltier elements to stabilize LD temperature. To solve this problem, the use of temperature-independent bandgap semiconductors as an active layer of LDs was proposed We proposed Tl-containing quaternary semiconductors TlInGaP and TlInGaAs as new Ill-V semiconductors showing temperature-independent bandgap energy for the possible application to the temperature-stable lasing wavelength laser diodes.

Keywords

III-V semiconductors; energy gap; gallium arsenide; indium compounds; laser frequency stability; optical transmitters; semiconductor lasers; sensitivity; thallium compounds; wavelength division multiplexing; Ill-V semiconductors; Peltier elements; Tl-containing quaternary semiconductors; TlInGaAs; TlInGaP; WDM systems; active layer; laser diode temperature stabilisation; temperature-independent bandgap energy; temperature-independent bandgap semiconductors; temperature-stable lasing wavelength laser diodes; DH-HEMTs; Diode lasers; Fiber lasers; Indium phosphide; Molecular beam epitaxial growth; Photonic band gap; Semiconductor lasers; Temperature dependence; Threshold current; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1159594

Filename

1159594