DocumentCode :
2925825
Title :
Fabrication and characterization of waveguide for all optical switching device based on intersubband transition in JI-VI based quantum well
Author :
Akita, K. ; Akimoto, R. ; Li, B. ; Hasama, T. ; Iida, Tomoharu ; Takanashi, Y.
Author_Institution :
Tokyo University of Science Faculty of Industrial Science and Technology, Japan; National Institute of Advanced Science and Technology, Photonics Research Institute, Japan, k-akita@aist.go.jp
fYear :
2005
fDate :
30-02 Aug. 2005
Firstpage :
1277
Lastpage :
1278
Abstract :
We report fabrication of the high mesa type waveguide structure for all optical switching device based on intersubband (ISB) transition in (CdS/ZnSe)/BeTe multiple quantum wells (MQWs). In this waveguide, we observed ISB absorption at a 1.55p. m optical communication wavelength.
Keywords :
Absorption; Optical device fabrication; Optical devices; Optical waveguides; Phonons; Quantum well devices; Tellurium; Ultrafast optics; Waveguide transitions; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN :
0-7803-9242-6
Type :
conf
DOI :
10.1109/CLEOPR.2005.1569719
Filename :
1569719
Link To Document :
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