DocumentCode
2925825
Title
Fabrication and characterization of waveguide for all optical switching device based on intersubband transition in JI-VI based quantum well
Author
Akita, K. ; Akimoto, R. ; Li, B. ; Hasama, T. ; Iida, Tomoharu ; Takanashi, Y.
Author_Institution
Tokyo University of Science Faculty of Industrial Science and Technology, Japan; National Institute of Advanced Science and Technology, Photonics Research Institute, Japan, k-akita@aist.go.jp
fYear
2005
fDate
30-02 Aug. 2005
Firstpage
1277
Lastpage
1278
Abstract
We report fabrication of the high mesa type waveguide structure for all optical switching device based on intersubband (ISB) transition in (CdS/ZnSe)/BeTe multiple quantum wells (MQWs). In this waveguide, we observed ISB absorption at a 1.55p. m optical communication wavelength.
Keywords
Absorption; Optical device fabrication; Optical devices; Optical waveguides; Phonons; Quantum well devices; Tellurium; Ultrafast optics; Waveguide transitions; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN
0-7803-9242-6
Type
conf
DOI
10.1109/CLEOPR.2005.1569719
Filename
1569719
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