DocumentCode :
2926125
Title :
Scheduled voltage scaling for increasing lifetime in the presence of NBTI
Author :
Zhang, Lide ; Dick, Robert P.
Author_Institution :
EECS Dept., Northwestern Univ., Evanston, IL
fYear :
2009
fDate :
19-22 Jan. 2009
Firstpage :
492
Lastpage :
497
Abstract :
Negative Bias Temperature Instability (NBTI) is a leading reliability concern for integrated circuits (ICs). It gradually increases the threshold voltages of PMOS transistors, thereby increasing delay. We propose scheduled voltage scaling, a technique that gradually increases the operating voltage of the IC to compensate for NBTI-related performance degradation. Scheduled voltage scaling has the potential to increase IC lifetime by 46% relative to the conventional approach using guard banding for ICs fabricated using a 45 nm process.
Keywords :
MOS integrated circuits; delays; integrated circuit reliability; power aware computing; scheduling; NBTI; PMOS transistors; delay; guard banding; integrated circuits reliability; negative bias temperature instability; scheduled voltage scaling; size 45 nm; Degradation; Energy consumption; Hydrogen; Integrated circuit reliability; MOSFETs; Negative bias temperature instability; Niobium compounds; Scheduling; Threshold voltage; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design Automation Conference, 2009. ASP-DAC 2009. Asia and South Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4244-2748-2
Electronic_ISBN :
978-1-4244-2749-9
Type :
conf
DOI :
10.1109/ASPDAC.2009.4796528
Filename :
4796528
Link To Document :
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