GaAs monolithic image rejection down-converter for point-to-multipoint communication systems

Author

Bonato, G.L. ; Boveda, A.

Author_Institution

Telettra Espana SA, Madrid, Spain

fYear

1992

fDate

1-5 June 1992

Firstpage

93

Abstract

A fully integrated GaAs monolithic image rejection downconverter for L/S band operation is presented. All the necessary subcircuits such as RF splitter, LO (local oscillator) phase shifter, two mixers, and its biasing circuits are included on a GaAs chip. Only an IF (intermediate frequency) hybrid is needed as external component. Experimental results verify the operation of the device, showing more than 20 dB of image rejection, 8 dB gain conversion, 30 dB LO to IF isolation, and 20 dB LO to RF isolation throughout the operating band. The MMIC (monolithic microwave integrated circuit) contains 18 MESFETs and 40 passive components in a 1.2*3 mm/sup 3/ area.<>

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; frequency convertors; gallium arsenide; microwave links; radio equipment; 8 dB; GaAs; L-band operation; LO phase shifter; MESFETs; MMIC; RF splitter; S-band operation; biasing circuits; local oscillator; mixers; monolithic image rejection downconverter; monolithic microwave integrated circuit; point-to-multipoint communication systems; Gain; Gallium arsenide; Image converters; Local oscillators; MESFET integrated circuits; MMICs; Microwave devices; Mixers; Phase shifters; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.187915

Filename

187915