X-band thin film acoustic filters on GaAs

Author

Stokes, R.B. ; Crawford, J.D.

Author_Institution

TRW, Redondo Beach, CA, USA

fYear

1992

fDate

1-5 June 1992

Firstpage

157

Abstract

The semiconductor bulk acoustic resonator (SBAR) is composed entirely of thin films, piezoelectric aluminum nitride, and metal electrode films (primarily aluminum). The authors describe the performance of an SBAR filter which has only 6.1 dB insertion loss at 7.8 GHz (2nd harmonic) and 7.5 dB insertion loss at 11.6 GHz (third harmonic), with fractional bandwidths less than 1%. This filter demonstrates that SBAR technology is practical for X-band filters in MMICs (monolithic microwave integrated circuits).<>

Keywords

MMIC; acoustic filters; acoustic microwave devices; acoustic resonators; crystal filters; gallium arsenide; microwave filters; passive filters; 11.6 GHz; 6.1 dB; 7.5 dB; 7.8 GHz; AlN-Al-Ti-GaAs; GaAs; MMICs; SHF; X-band; insertion loss; metal electrode films; monolithic microwave integrated circuits; piezoelectric AlN layer; semiconductor bulk acoustic resonator; thin film acoustic filters; Aluminum nitride; Electrodes; Film bulk acoustic resonators; Insertion loss; MMICs; Microwave filters; Piezoelectric films; Power harmonic filters; Semiconductor films; Semiconductor thin films;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.187933

Filename

187933