Title :
Carrier heating in semiconductor optical amplifiers with injection
Author :
Fehr, J.-N. ; Hessler, T.P. ; Selbmann, P.E. ; Dupertuis, M.-A. ; Deveaud, B. ; Emery, J.-Y. ; Dorgeuille, F. ; Pommereau, Franck ; Dagens, B.
Author_Institution :
Dept. of Phys., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
Abstract :
Summary form only given.Although semiconductor optical amplifiers (SOA) are required for all-optical devices and are to be used in future telecommunication networks, little is known about their internal carrier density and temperature distributions and their dependencies on various parameters such as applied current, injected optical signal power, and active layer geometry. Measurements of spontaneous emission (SE) provide information on both density and temperature of the carriers. Such an experiment has already revealed longitudinal spatial hole burning (LSHB) and carrier heating in an SOA working at 1.55 /spl mu/m. LSHB in this structure is caused by amplified spontaneous emission (ASE) and by injection of an optical signal. Here, we present for the first time to our knowledge, spatially resolved temperature measurements on SOAs.
Keywords :
carrier density; optical hole burning; optical testing; optical transmitters; semiconductor device testing; semiconductor optical amplifiers; superradiance; temperature measurement; 1.55 mum; active layer geometry; all-optical devices; amplified spontaneous emission; carrier heating; future telecommunication networks; injected optical signal power; internal carrier density; longitudinal spatial hole burning; optical signal injection; semiconductor optical amplifiers; spatially resolved temperature measurements; spontaneous emission; temperature distributions; Charge carrier density; Density measurement; Geometrical optics; Heating; Optical devices; Optical fiber networks; Semiconductor optical amplifiers; Spontaneous emission; Stimulated emission; Temperature distribution;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.907198
