DocumentCode
2926880
Title
12.4: Research progress of S-band broadband klystron in IECAS
Author
Wang, Yong ; Ding, Yaogen ; Liu, Pukun ; Zhiqiang Zhang ; Zhang, Zhiqiang
Author_Institution
Key Lab. of High Power Microwave Sources & Technol., Chinese Acad. of Sci., Beijing, China
fYear
2010
fDate
18-20 May 2010
Firstpage
219
Lastpage
220
Abstract
From 1960s the Institute of Electronics, Chinese Academy of Sciences (IECAS) began to study the broadband klystron. Many methods to extend bandwidth of klystron have been adopted and more than ten types of broadband klystron have been developed. Recently we have successfully broken through the bandwidth of 12% in S-band on the peak power level of 800 kW. This paper introduces the state-of-art of our S-band broadband klystron.
Keywords
klystrons; Chinese Academy of Sciences; IECAS; Institute of Electronics; S-band broadband klystron; power 800 kW; Bandwidth; Circuits; Electrons; Impedance; Klystrons; Laboratories; Microwave technology; Nuclear and plasma sciences; Radar; Solids; S-band; broadband klystron; extending bandwidth; research progress;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electronics Conference (IVEC), 2010 IEEE International
Conference_Location
Monterey, CA
Print_ISBN
978-1-4244-7098-3
Type
conf
DOI
10.1109/IVELEC.2010.5503523
Filename
5503523
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