New approach to GaAs MESFET analog frequency dividers with low threshold input power and high conversion gain

Author

Amine, H. ; Llopis, O. ; Gayral, M. ; Graffeuil, J. ; Sautereau, J.F.

Author_Institution

LAAS-CNRS, Toulouse, France

fYear

1992

fDate

1-5 June 1992

Firstpage

285

Abstract

A novel approach to frequency dividers based on the nonlinear feedback control of MESFET in forced oscillation mode is proposed. The input signal is used to control the FET gain, imposing oscillation conditions. This approach is first tested by time-domain simulation. An experimental MESFET analog frequency divider exhibits high gain conversion and low threshold input power values. The good agreement between simulated and experimental results confirms the proposed models and concept.<>

Keywords

III-V semiconductors; feedback; frequency dividers; gallium arsenide; nonlinear network analysis; nonlinear network synthesis; solid-state microwave circuits; time-domain analysis; FET gain control; GaAs; MESFET; analog frequency dividers; forced oscillation mode; high conversion gain; low threshold input power; nonlinear feedback control; time-domain simulation; Circuits; Communication system control; FETs; Feedback control; Force control; Frequency conversion; Gallium arsenide; Intrusion detection; MESFETs; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.187968

Filename

187968