DocumentCode
2927057
Title
Microwave noise figure in MESFETs and HEMTs with kink-effect and (or) parallel conduction
Author
Reynoso-Hernandez, J.A. ; Escotte, L. ; Plana, R. ; Graffeuil, J.
Author_Institution
CICESE, Ensenada, Mexico
fYear
1992
fDate
1-5 June 1992
Firstpage
289
Abstract
The authors consider the influence of the kink effect often noticed in MESFETs and HEMTs (high electron mobility transistors) and the parallel conduction sometimes observed in HEMTs on the microwave noise figure. It is found that the kink effect mostly affects MESFET noise and that parallel conduction affects HEMT noise, especially when operated at large drain current. Consequences for optimal bias conditions for low noise amplifiers are outlined.<>
Keywords
Schottky gate field effect transistors; high electron mobility transistors; semiconductor device noise; solid-state microwave devices; HEMTs; LNA bias; MESFETs; high electron mobility transistors; kink-effect; low noise amplifiers; microwave noise figure; optimal bias conditions; parallel conduction; FETs; Gallium arsenide; HEMTs; Impact ionization; MESFETs; MODFETs; Noise figure; PHEMTs; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location
Albuquerque, NM, USA
ISSN
0149-645X
Print_ISBN
0-7803-0611-2
Type
conf
DOI
10.1109/MWSYM.1992.187969
Filename
187969
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