Title :
Dynamic-range figure of merit in high-gain amplifiers
Author_Institution :
Texas Instruments Inc., Dallas, TX, USA
Abstract :
An optimum scaling that maximizes the (output and input) two-tone third-order intercept point of an amplifier with respect to DC power consumption is derived. The expression for spurious-free dynamic range of a high-gain amplifier is factored to separate effects of device parameters on dynamic range and to derive a new figure of merit. Based on this figure, the low-noise, linearized pulse-doped FET is judged to be the best high-dynamic-range device.<>
Keywords :
field effect transistor circuits; microwave amplifiers; semiconductor device noise; solid-state microwave circuits; DC power consumption; figure of merit; high-dynamic-range device; high-gain amplifiers; linearized pulse-doped FET; low noise FET; scaling; separate effects of device parameters; spurious-free dynamic range; two stage amplifier; two-tone third-order intercept point; Active noise reduction; Dynamic range; Energy consumption; Laboratories; Linearity; Low-noise amplifiers; Magneto electrical resistivity imaging technique; Microwave amplifiers; Noise figure; Power amplifiers;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.187977
