DocumentCode
2927232
Title
Dynamic-range figure of merit in high-gain amplifiers
Author
Ikalainen, P.K.
Author_Institution
Texas Instruments Inc., Dallas, TX, USA
fYear
1992
fDate
1-5 June 1992
Firstpage
321
Abstract
An optimum scaling that maximizes the (output and input) two-tone third-order intercept point of an amplifier with respect to DC power consumption is derived. The expression for spurious-free dynamic range of a high-gain amplifier is factored to separate effects of device parameters on dynamic range and to derive a new figure of merit. Based on this figure, the low-noise, linearized pulse-doped FET is judged to be the best high-dynamic-range device.<>
Keywords
field effect transistor circuits; microwave amplifiers; semiconductor device noise; solid-state microwave circuits; DC power consumption; figure of merit; high-dynamic-range device; high-gain amplifiers; linearized pulse-doped FET; low noise FET; scaling; separate effects of device parameters; spurious-free dynamic range; two stage amplifier; two-tone third-order intercept point; Active noise reduction; Dynamic range; Energy consumption; Laboratories; Linearity; Low-noise amplifiers; Magneto electrical resistivity imaging technique; Microwave amplifiers; Noise figure; Power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location
Albuquerque, NM, USA
ISSN
0149-645X
Print_ISBN
0-7803-0611-2
Type
conf
DOI
10.1109/MWSYM.1992.187977
Filename
187977
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