Title :
Attenuation of millimeterwave coplanar lines on gallium arsenide and indium phosphide over the range 1-60 GHz
Author :
Haydl, W.H. ; Braunstein, J. ; Kitazawa, T. ; Schlechtweg, M. ; Tasker, P. ; Eastman, L.F.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
Extensive attenuation data of coplanar lines on semi-insulating GaAs and InP are presented over the frequency range 1-60 GHz. On-wafer measurements were used to obtain the S-parameters. A ground-to-ground spacing of 30, 60, and 120 mu m, typical of that used in today´s microwave and millimeter-wave integrated circuit applications, was investigated. The center line width (impedance) and the evaporated gold metal thickness were varied. For the frequency range investigated (metal thickness less than 2-3 times the skin depth), the attenuation was found to be inversely proportional to the metal thickness.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; transmission lines; waveguides; 1 to 60 GHz; 30 to 120 micron; Au metallisation; CPW; EHF; GaAs substrates; InP substrates; MM-waves; S-parameters; SHF; attenuation data; center line width; coplanar transmission lines; coplanar waveguides; frequency range; ground-to-ground spacing; metal thickness; millimeterwave coplanar lines; semiconductors; semiinsulating substrates; skin depth; Attenuation; Frequency; Gallium arsenide; Gold; Impedance; Indium phosphide; Integrated circuit measurements; Millimeter wave integrated circuits; Scattering parameters; Skin;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.187984
