• DocumentCode
    29274
  • Title

    InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment

  • Author

    Han-Chieh Ho ; Zong-Yan Gao ; Heng-Kuang Lin ; Pei-Chin Chiu ; Yue-Ming Hsin ; Jen-Inn Chyi

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
  • Volume
    49
  • Issue
    7
  • fYear
    2013
  • fDate
    March 28 2013
  • Firstpage
    499
  • Lastpage
    500
  • Abstract
    This reported work investigates InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment. The study found that hydrogen plasma treatment can effectively shift threshold voltage from 0.47 to 0 V. A 0.2 μm gate-length device exhibited DC performances of a maximum drain current of 61 mA/mm, and a peak gm of 83 mS/mm.
  • Keywords
    III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; plasma materials processing; DC performances; InGaSb-AlSb; drain current; gate-length device; hydrogen plasma treatment; p-channel HFET; size 0.2 mum; threshold voltage; voltage 0.47 V to 0 V;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2013.0430
  • Filename
    6504986
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=29274