Title :
Two-phonon processes in II-VI semiconductors investigated with terahertz time-domain spectroscopy
Author :
Schall, M. ; Walther, M. ; Helm, H. ; Jepsen, P.U.
Author_Institution :
Dept. of Molecular & Opt. Phys., Freiburg Univ., Germany
Abstract :
Summary form only given. Terahertz time-domain spectroscopy (THz-TDS) is meanwhile a well proved technique to determine the complex dielectric function of materials in the far-infrared (FIR) regime of the electromagnetic spectrum. Especially in accurate measurements of the optical properties of crystals at frequencies below the transverse optical phonon (TO) resonance, THz-TDS is a powerful alternative to classical methods like Raman and FTIR spectroscopy. We investigate the temperature-dependent FIR properties of the II-VI semiconductor compounds ZnTe and CdTe in the frequency range between 200 GHz and 2.3 THz.
Keywords :
II-VI semiconductors; absorption coefficients; cadmium compounds; dielectric function; infrared spectra; millimetre wave spectra; phonon-phonon interactions; time-domain analysis; zinc compounds; 200 GHz to 2.3 THz; CdTe; II-VI semiconductors; ZnTe; absorption coefficients; classical methods; complex dielectric function; electromagnetic spectrum; far-infrared regime; frequency range; optical properties; temperature-dependent FIR properties; terahertz time-domain spectroscopy; transverse optical phonon resonance; two-phonon processes; Crystalline materials; Dielectric materials; Dielectric measurements; Electrochemical impedance spectroscopy; Electromagnetic spectrum; Finite impulse response filter; Frequency; II-VI semiconductor materials; Optical materials; Time domain analysis;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.907259
